Continuous operation over 10 000 h of GaAs/GaAlAs double‐heterostructure laser without lattice mismatch compensation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.88383
Reference5 articles.
1. Continuous operation of GaAs–Ga1 −xAlxAs double‐heterostructure lasers with 30 °C half‐lives exceeding 1000 h
2. Continuous Operation over 2500 h of Double Heterostructure Laser Diodes with Output Powers More Than 80 mW
3. Reliability of DH GaAs lasers at elevated temperatures
4. Degradation of (Ga·Al)As double heterostructure diode lasers
5. Threshold reduction by the addition of phosphorus to the ternary layers of double‐heterostructure GaAs lasers
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1. Recent Developments in Fiber Optic Devices;IEEE Transactions on Microwave Theory and Techniques;1982-02
2. Recent progress in growing reliable (AlGa)As DH lasers by molecular beam epitaxy for optical communication systems;Journal of Crystal Growth;1982-01
3. Reliability of 0.87 µm (Al,Ga)As double heterostructure lasers with Ga(As,Sb) active layers;IEEE Electron Device Letters;1981-02
4. The high‐temperature (55–70 °C) device characteristics of cw (AlGa)As double‐heterostructure proton‐bombarded stripe lasers grown by molecular beam epitaxy;Applied Physics Letters;1981-01
5. Halbleiterlaser;Optoelektronik I;1981
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