The high‐temperature (55–70 °C) device characteristics of cw (AlGa)As double‐heterostructure proton‐bombarded stripe lasers grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

The high‐temperature (55–70 °C) device characteristics of cw (AlGa)As double‐heterostructure proton‐bombarded stripe lasers grown by molecular beam epitaxy

Published:1981-01 Issue:1 Volume:38 Page:6-9
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tsang W. T.,Holbrook W. R.,Fraley P. E.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.92133

Reference11 articles.

1. Low‐current‐threshold and high‐lasing uniformity GaAs–AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy

2. Thermal and impulse coupling to an aluminum surface by a pulsed KrF laser

3. Infrared‐visible (0.89–0.72 μm) AlxGa1−xAs/AlyGa1−yAs double‐heterostructure lasers grown by molecular beam epitaxy

4. Continuous operation over 10 000 h of GaAs/GaAlAs double‐heterostructure laser without lattice mismatch compensation

5. The reliability of a practical Ga<inf>1-x</inf>Al<inf>x</inf>As laser device

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1. Surface and bulk leakage currents in transverse junction stripe lasers;Journal of Applied Physics;1991-01-15

2. Trends of deep level electron traps in AlxGa1−xAs grown by molecular beam epitaxy;Applied Physics Letters;1988-11-14

3. Kinetics of the Staebler-Wronski effect;Physical Review B;1987-01

4. Uniformity of an embedded stripe large optical‐cavity GaAs/GaAlAs double‐heterostructure laser grown by metallo‐organic chemical vapor deposition;Journal of Applied Physics;1986-02-15

5. LPE of buried heterostructure laser devices;Progress in Crystal Growth and Characterization;1986-01