Recent progress in growing reliable (AlGa)As DH lasers by molecular beam epitaxy for optical communication systems
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference36 articles.
1. Low‐current‐threshold and high‐lasing uniformity GaAs–AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy
2. Thermal and impulse coupling to an aluminum surface by a pulsed KrF laser
3. Infrared‐visible (0.89–0.72 μm) AlxGa1−xAs/AlyGa1−yAs double‐heterostructure lasers grown by molecular beam epitaxy
4. Threshold reduction by the addition of phosphorus to the ternary layers of double‐heterostructure GaAs lasers
5. Low‐threshold double heterojunction AlGaAs/GaAs laser diodes: Theory and experiment
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Al-As-Ga (Aluminium-Arsenic-Gallium);Non-Ferrous Metal Systems. Part 1;2006
2. Effects of thermal annealing on Si‐doped GaAs grown by molecular beam epitaxy;Journal of Applied Physics;1985-05-15
3. Chapter 2 Molecular Beam Epitaxy for III–V Compound Semiconductors;Semiconductors and Semimetals;1985
4. Retrospect and Prospects of MBE;The Technology and Physics of Molecular Beam Epitaxy;1985
5. Semiconductor Lasers and Photodetectors by Molecular Beam Epitaxy;Molecular Beam Epitaxy and Heterostructures;1985
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