Femtosecond studies of electron capture times in InGaN/GaN multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1707226
Reference13 articles.
1. Theoretical study of electron transport in gallium nitride
2. Carrier capture in pseudomorphically strained wurtzite GaN quantum-well lasers
3. Quantum Capture of Injected Electrons in GaN-Based Laser Heterostructures
4. Ultrafast optical characterization of carrier capture times in InxGa1−xN multiple quantum wells
5. Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells
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3. Photo-induced droop in blue to red light emitting InGaN/GaN single quantum wells structures;Journal of Applied Physics;2017-08-14
4. Carrier capture in InGaN/GaN quantum wells: Role of electron-electron scattering;Journal of Applied Physics;2017-03-28
5. Carrier dynamics and Coulomb-enhanced capture in III-nitride quantum heterostructures;Applied Physics Letters;2016-07-18
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