Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1557770
Reference11 articles.
1. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
2. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
3. Ultrafast optical characterization of carrier capture times in InxGa1−xN multiple quantum wells
4. Ü. Özgür and H. O. Everitt, http://xxx.lanl.gov/abs/cond-mat/0210214
5. Dynamics of optical gain in InxGa1−xN multi-quantum-well-based laser diodes
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2. Inhomogeneous injection in III-nitride light emitters with deep multiple quantum wells;Journal of Computational Electronics;2015-02-17
3. Carrier dynamics in blue and green emitting InGaN MQWs;physica status solidi (b);2015-01-20
4. GaN-Based Optical Devices;Handbook of Luminescent Semiconductor Materials;2011-09-07
5. Carrier Transport in InGaN MQWs of Aquamarine- and Green-Laser Diodes;IEEE Journal of Selected Topics in Quantum Electronics;2011-09
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