Carrier dynamics in blue and green emitting InGaN MQWs
Author:
Affiliation:
1. Institute of Applied Research; Vilnius University; Saulėtekio al. 9-3 Vilnius LT-10222 Lithuania
2. AIXTRON SE; Kaiserstr. 98 D-52134 Herzogenrath Germany
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference29 articles.
1. Efficiency droop in nitride-based light-emitting diodes
2. Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies
3. Exciton localization and the Stokes’ shift in InGaN epilayers
4. Origin of the “green gap”: Increasing nonradiative recombination in indium-rich GaInN/GaN quantum well structures
5. Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra
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3. Analysis of phonon transport through heterointerfaces of InGaN/GaN via Raman imaging using double-laser system: The effect of crystal defects at heterointerface;Materials Science in Semiconductor Processing;2022-11
4. Impact of carrier diffusion on the internal quantum efficiency of InGaN quantum well structures;Journal of Materials Chemistry C;2022
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