Ultrafast optical characterization of carrier capture times in InxGa1−xN multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126893
Reference18 articles.
1. InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode
2. Carrier capture in InGaN quantum wells and hot carrier effects in GaN
3. Structure dependent modulation responses in quantum-well lasers
4. High speed quantum-well lasers and carrier transport effects
5. Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD
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2. Large Rabi splitting in InGaN quantum wells microcavity at room temperature;Materials Research Express;2019-04-24
3. Interwell carrier transport in InGaN/(In)GaN multiple quantum wells;Applied Physics Letters;2019-04-15
4. Carrier capture in InGaN/GaN quantum wells: Role of electron-electron scattering;Journal of Applied Physics;2017-03-28
5. Carrier dynamics and Coulomb-enhanced capture in III-nitride quantum heterostructures;Applied Physics Letters;2016-07-18
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