InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode-Reference-Cited by-同舟云学术

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InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode

Published:1998-09-15 Issue:Part 2, No. 9A/B Volume:37 Page:L1020-L1022
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nakamura Shuji,Senoh Masayuki,Nagahama Shin-ichi,Iwasa Naruhito,Yamada Takao,Matsushita Toshio,Kiyoku Hiroyuki,Sugimoto Yasunobu,Kozaki Tokuya,Umemoto Hitoshi,Sano Masahiko,Chocho Kazuyuki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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