Carrier dynamics and Coulomb-enhanced capture in III-nitride quantum heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4959143
Reference23 articles.
1. Recombination balance in green-light-emitting GaN/InGaN/AlGaN quantum wells
2. Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis
3. Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes
4. Gain analysis of blue nitride-based lasers by small signal modulation
5. Influence of indium content and temperature on Auger-like recombination in InGaN quantum wells grown on (111) silicon substrates
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