Plasma deposition of amorphous SiC:H,F alloys from SiF4‐CH4‐H2mixtures under modulated conditions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.362473
Reference12 articles.
1. Improvement of the optical and photoelectric properties of hydrogenated amorphous silicon‐carbon alloys by using trisilylmethane as a feedstock
2. On the differences between a-SiC:H films deposited with and without fluorine
3. Fluorine‐induced suppression of disorder effects of carbon in the hydrogenated amorphous silicon‐carbon alloy thin films
4. Radiofrequency-plasma-deposited hydrogenated fluorinated silicon-carbon alloy films
5. Neutral and ion chemistry in a C2H4-SiH4 discharge
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1. Elimination of silicon gas phase nucleation using tetrafluorosilane (SiF4 ) precursor for high quality thick silicon carbide (SiC) homoepitaxy;physica status solidi (a);2012-09-07
2. Characterization of diamond-like nanocomposite thin films grown by plasma enhanced chemical vapor deposition;Journal of Applied Physics;2010-06-15
3. Structural and mechanical properties of amorphous silicon carbonitride films prepared by vapor-transport chemical vapor deposition;Surface and Coatings Technology;2009-11
4. Structural and optical characterization of fluorinated hydrogenated silicon carbide films deposited by pulsed glow discharge;Surface and Coatings Technology;2006-05
5. Incorporation of fluorine in hydrogenated silicon carbide films deposited by pulsed glow discharge;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004-07
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