Monolayer epitaxy of III‐V compounds by low‐pressure metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98944
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1. Atomistic description of the electronic structure ofInxGa1−xAsalloys and InAs/GaAs superlattices;Physical Review B;2002-07-30
2. Systematic study of Ga1−xInxAs self-assembled quantum wires with varying interfacial strain relaxation;Journal of Applied Physics;2001-02-15
3. Low temperature atomic layer growth of aluminum nitride on Si(100) using dimethylethylamine alane and 1,1-dimethylhydrazine;Thin Solid Films;2000-09
4. LP-MOCVD grown (lnAs)m(GaAs)m short period superlattices on InP;Journal of Electronic Materials;1996-03
5. Low-pressure metalorganic vapour phase epitaxy growth of InAs/GaAs short period superlattices on InP substrates;Journal of Crystal Growth;1994-12
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