High field electron transport inn‐InP/GaInAs two‐dimensional electron gas
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95871
Reference8 articles.
1. Growth of Ga0.47In0.53As‐InP quantum wells by low pressure metalorganic chemical vapor deposition
2. Selectively doped n+ InP/n− GaInAs heterostructure prepared using chloride transport vapour-phase epitaxy
3. Negative differential resistance through real‐space electron transfer
4. Schottky barrier height of n‐InxGa1−xAs diodes
5. Observation of intersubband scattering in a 2-dimensional electron system
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1. Electric field dependence of the electron drift velocity in n-type InxGa1-xAs1-yBiy epilayer;Physica B: Condensed Matter;2024-07
2. Characterization of induced quasi-two-dimensional transport in n-type InxGa1−xAs1 − yBiy bulk layer;Applied Physics A;2024-06-26
3. Structural and magnetotransport properties of an In0.53Ga0.47As/InP heterostructure;Journal of Materials Science Letters;1993
4. Electric subband studies in an In0.53Ga0.47As/InP one-side-modulation-doped quantum well;Solid State Communications;1992-12
5. Properties of the two‐dimensional electron gas in modulation‐doped GaInAs(P)/InP structures grown by low‐pressure metalorganic vapor‐phase epitaxy;Journal of Applied Physics;1989-07-15
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