Properties of the two‐dimensional electron gas in modulation‐doped GaInAs(P)/InP structures grown by low‐pressure metalorganic vapor‐phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343540
Reference22 articles.
1. High field electron transport inn‐InP/GaInAs two‐dimensional electron gas
2. GaInAs‐InP multiquantum well structures grown by metalorganic gas phase epitaxy with adducts
3. Extremely high quality Ga0.47In0.53As/InP quantum wells grown by chemical beam epitaxy
4. High quality narrow GaInAs/InP quantum wells grown by atmospheric organometallic vapor phase epitaxy
5. Optical properties of very narrow GaInAs/InP quantum wells grown by low‐pressure metalorganic vapor phase epitaxy
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2. 2-D-3-D crossover in single asymmetric quantum wells: investigation of the electric field and temperature effects;IEEE Journal of Quantum Electronics;2000-03
3. Stokes shift in one-side modulation-n-doped-strained GaxIn1−xAs/InP asymmetric quantum well;Superlattices and Microstructures;1999-12
4. Quantum point contacts on InGaAs/InP heterostructures;Superlattices and Microstructures;1998-06
5. The 2-D-3-D crossover in modulation-doped GaAs-Ga/sub 1-x/Al/sub x/As quantum wells;IEEE Journal of Quantum Electronics;1997
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