Systematic study of Ga1−xInxAs self-assembled quantum wires with varying interfacial strain relaxation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1323540
Reference29 articles.
1. Band-structure engineering for low-threshold high-efficiency semiconductor lasers
2. Reduction of lasing threshold current density by the lowering of valence band effective mass
3. GaxIn1−xAs multiple‐quantum‐wire lasers grown by the strain‐induced lateral‐layer ordering process
4. GaxIn1−xAs multiple‐quantum‐wire lasers grown by the strain‐induced lateral‐layer ordering process
5. GaxIn1−xAs multiple‐quantum‐wire lasers grown by the strain‐induced lateral‐layer ordering process
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The Electronic Structure and Transmission Characteristics of Disordered AlGaAs Nanowires;IEEE Transactions On Nanotechnology;2007-01
2. Intersubband and intraband transitions of self-assembled quantum wires for the infrared detectors;Acta Physica Sinica;2005
3. Optical properties of self-assembled quantum wires for application in infra-red detection;Infrared Physics & Technology;2003-02
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