Annealing characteristics and thermal stability of electron beam evaporated ruthenium Schottky contacts ton‐GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106567
Reference8 articles.
1. Barrier height and leakage reduction in n-GaAs–platinum group metal Schottky barriers upon exposure to hydrogen
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3. Microstructure evolution of newly developed electroless ruthenium deposition on silicon observed by scanning transmission electron microscope
4. Barrier heights to silicon, of ruthenium and its silicide
5. Silicides of ruthenium and osmium: Thin film reactions, diffusion, nucleation, and stability
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