Formation and structure of epitaxial ruthenium silicides on (111)Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346500
Reference8 articles.
1. Increased effective barrier heights in Schottky diodes by molecular‐beam epitaxy of CoSi2and Ga‐doped Si on Si(111)
2. Schottky barrier height of single‐crystal nickel disilicide/silicon interfaces
3. Growth of ultrathin single‐crystal NiSi2 layers on Si(111)
4. Silicides of ruthenium and osmium: Thin film reactions, diffusion, nucleation, and stability
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