Increased effective barrier heights in Schottky diodes by molecular‐beam epitaxy of CoSi2and Ga‐doped Si on Si(111)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341315
Reference12 articles.
1. Increasing the effective height of a Schottky barrier using low‐energy ion implantation
2. Reducing the effective height of a Schottky barrier using low‐energy ion implantation
3. Low barrier height Schottky mixer diode using super thin silicon films by molecular beam epitaxy
4. Engineered Schottky barrier diodes for the modification and control of Schottky barrier heights
5. Chemical and electronic structure of the SiO2/Si interface
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