Growth and characterization of epitaxial Ni and Co silicides-Reference-Cited by-同舟云学术

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Growth and characterization of epitaxial Ni and Co silicides

Published:1992-05 Issue:5 Volume:8 Page:193-269
ISSN:0920-2307
Container-title:Materials Science Reports
language:en
Short-container-title:Materials Science Reports

Author:

von Känel H.

Publisher

Elsevier BV

Subject

General Engineering

Reference249 articles.

1. (Invited) Epitaxial Silicide Films for Integrated Circuits and Future Devices

2. Self-aligned silicides or metals for very large scale integrated circuit applications

3. Proceedings of the 1st Electronic Materials and Processing Congress;Kim,1988

4. Transistor effect in monolithic Si/CoSi2/Si epitaxial structures

5. Formation of Embedded Monocrystalline NiSi2Grid Layers in Silicon by MBE

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1. Evidence of silicide at the Ni/β-Si3N4(0001)/Si(111) interface;Applied Surface Science;2023-06

2. Effects of an epitaxial graphene layer for the growth of nickel silicides on a Ni(111) substrate;Applied Surface Science;2023-02

3. Seed-assisted epitaxy of intermetallic compounds with interface-determined orientation: Incommensurate Nowotny chimney-ladder FeGe epitaxial film;Acta Materialia;2022-09

4. The straightforward fabrication of thin silicide layers at low temperatures by employing the molecular-incident reaction effect;Results in Physics;2022-08

5. Pb/NiSi2 atomic sandwich on Si(111);Surface Science;2022-02

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