Effects of an epitaxial graphene layer for the growth of nickel silicides on a Ni(111) substrate-Reference-Cited by-同舟云学术

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Effects of an epitaxial graphene layer for the growth of nickel silicides on a Ni(111) substrate

Published:2023-02 Issue: Volume:611 Page:155763
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Ronci Fabio,Colonna Stefano,Flammini Roberto,De Crescenzi Maurizio,Scarselli Manuela,Salvato Matteo,Berbezier Isabelle,Vach Holger,Castrucci Paola

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference41 articles.

1. Towards implementation of a nickel silicide process for CMOS technologies;Lavoie;Microelectron. Eng.,2003

2. Dielectrophoretically controlled fabrication of single-crystal nickel silicide nanowire interconnects;Dong;Nano Lett.,2005

3. Silicon-nanowire transistors with intruded nickel-silicide contacts;Weber;Nano Lett.,2006

4. CMOS integration of dual work function phase-controlled Ni fully silicided gates (NMOS: NiSi, PMOS : Ni2Si, and Ni31Si12) on HfSiON;Kittl;IEEE Electr. Device Lett.,2006

5. Silicides and germanides for nano-CMOS applications;Kittl;Mater. Sci. Eng. B-Adv.,2008

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1. Investigation of fiber laser-induced porous graphene electrodes in controlled atmospheres for ZnO nanorod-based NO2 gas sensors;Applied Surface Science;2023-05

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