Nanoscale relaxation in Ru-Si growth on a silicon (111) surface-Reference-Cited by-同舟云学术

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Nanoscale relaxation in Ru-Si growth on a silicon (111) surface

Published:2013-02-21 Issue:7 Volume:45 Page:1109-1112
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Toramaru M.¹,Kobayashi N.¹,Kawamura N.,Ohno S.,Miyamoto Y.²,Shudo K.³

Affiliation:

1. Graduate School of Engineering; Yokohama National University; Tokiwadai 79-5; Hodogaya-ku; Yokohama; 240-8501; Japan

2. NHK Science and Technical Research Laboratories; Kinuta 1-10-11; Setagaya-ku; Tokyo; 157-8510; Japan

3. Faculty of Engineering/Science; Yokohama National University; Tokiwadai 79-5; Hodogaya-ku; Yokohama; 240-8501; Japan

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference26 articles.

1. Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition

2. Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications

3. Observation of magnetism in the nanoscale amorphous ruthenium clusters prepared by ion beam mixing

4. Conduction in ultrathin ruthenium electrodes prepared by atomic layer deposition

5. Silicides of ruthenium and osmium: Thin film reactions, diffusion, nucleation, and stability

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Free-standing nanolayers based on Ru silicide formation on Si(100);Physical Review Materials;2022-04-15

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