Schottky barrier height of single‐crystal nickel disilicide/silicon interfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341239
Reference13 articles.
1. Barrier heights and silicide formation for Ni, Pd, and Pt on silicon
2. Effects of variations of silicide characteristics on the Schottky-barrier height of silicide-silicon interfaces
3. Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor Interfaces
4. Correlation of Schottky-Barrier Height and Microstructure in the Epitaxial Ni Silicide on Si(111)
5. Schottky-barrier heights of single-crystalNiSi2on Si(111): The effect of a surfacep-njunction
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3. NiSi2 formation through annealing of nickel and dysprosium stack on Si(100) and impact on effective Schottky barrier height;Journal of Applied Physics;2013-01-07
4. Multiscale modeling of Schottky-barrier MOSFETs with disilicide source/drain contacts: Role of contacts in the carrier injection;Physical Review B;2007-09-28
5. Semiconductor Contact Technology;Handbook of Semiconductor Interconnection Technology, Second Edition;2006-02-22
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