Microstructure evolution of newly developed electroless ruthenium deposition on silicon observed by scanning transmission electron microscope
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347517
Reference11 articles.
1. Phase formation and identification of an epitaxial Fe‐Ni alloy silicide
2. Chemical bonding and Schottky barrier formation at transition metal–silicon interfaces
3. Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Structures
4. Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor Interfaces
5. Correlation of Schottky-Barrier Height and Microstructure in the Epitaxial Ni Silicide on Si(111)
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1. Electroless Plating of Ru Using Hydrazine Hydrate as a Reducing Agent;Journal of Electronic Materials;2023-07-26
2. Review—Ruthenium as Diffusion Barrier Layer in Electronic Interconnects: Current Literature with a Focus on Electrochemical Deposition Methods;Journal of The Electrochemical Society;2018-12-10
3. Immersion and electrochemical deposition of Ru on Si;Electrochimica Acta;2018-06
4. Electroless Plating Baths of Metals, Binary Alloys, and Multicomponent Alloys;Amorphous and Nano Alloys Electroless Depositions;2016
5. Electroless deposition of Ru films on Si substrates with surface pretreatments;Thin Solid Films;2013-02
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