Influence of uniaxial mechanical stress on the high frequency performance of metal-oxide-semiconductor field effect transistors on (100) Si wafer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3428793
Reference17 articles.
1. A new aspect of mechanical stress effects in scaled MOS devices
2. Stress-induced effects on depletion-layer capacitance of metal–oxide–semiconductor capacitors
3. Opposing dependence of the electron and hole gate currents in SOI MOSFETs under uniaxial strain
4. Evaluation of Stress Effects on Electrical Characteristics of N-Type MOSFETs: Variations of DC Characteristics During the Resin-Molding Process
5. Impact of mechanical stress on gate tunneling currents of germanium and silicon p-type metal-oxide-semiconductor field-effect transistors and metal gate work function
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