Comment on “Thermal annealing effect on the intersublevel transitions in InAs quantum dots” [Appl. Phys. Lett. 78, 2196 (2001)]
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1489487
Reference15 articles.
1. Thermal annealing effect on the intersublevel transitions in InAs quantum dots
2. Temperature dependence of the Eo and Eo + △o gaps of InP up to 600°C
3. Electrical, optical properties, and surface morphology of high purity InP grown by chemical beam epitaxy
4. Electrical and optical properties of Si-doped InP grown by solid source molecular beam epitaxy using a valved phosphorus cracker cell
5. High-quality InP grown by chemical beam epitaxy
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3. Tuning of the electronic properties of self-assembled InAs/InP(001) quantum dots by rapid thermal annealing;Applied Physics Letters;2004-04-26
4. InAs/InP quantum dot microcavities employing dielectric Bragg mirrors;Physica E: Low-dimensional Systems and Nanostructures;2004-03
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