Thermal annealing effect on the intersublevel transitions in InAs quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1363693
Reference20 articles.
1. Lasing from InGaAs/GaAs quantum dots with extended wavelength and well-defined harmonic-oscillator energy levels
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3. Room‐temperature lasing operation of a quantum‐dot vertical‐cavity surface‐emitting laser
4. Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors
5. Normal-incidence infrared photoconductivity in Si p-i-n diode with embedded Ge self-assembled quantum dots
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1. Optical and electronic properties of low-density InAs/InP quantum-dot-like structures designed for single-photon emitters at telecom wavelengths;Physical Review B;2020-05-11
2. Influence ofin situannealing on carrier dynamics in InGaAs/GaAs quantum dots;Nanotechnology;2007-07-13
3. Families of islands in InAs/InP self-assembled quantum dots: a census obtained from magneto-photoluminescence;Semiconductor Science and Technology;2003-03-13
4. Hydrogen passivation of self assembled InAs quantum dots;Journal of Applied Physics;2002-12
5. Optical and Electrical Injection of Single Quantum Dots: Beyond the Inhomogeneous Broadening Issues;physica status solidi (b);2002-11
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