Density of states of Pb1 Si/SiO2 interface trap centers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1461053
Reference23 articles.
1. Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I
2. ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers
3. Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers
4. Hole traps and trivalent silicon centers in metal/oxide/silicon devices
5. Effect of bias on radiation‐induced paramagnetic defects at the silicon‐silicon dioxide interface
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