Near infrared image sensor with integrated germanium photodiodes.
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3608245
Reference12 articles.
1. A plasma process for ultrafast deposition of SiGe graded buffer layers
2. Structural characterization of thick, high-quality epitaxial Ge on Si substrates grown by low-energy plasma-enhanced chemical vapor deposition
3. Application of high-resolution x-ray diffraction for detecting defects in SiGe(C) materials
4. Pure germanium epitaxial growth on thin strained silicon-germanium graded layers on bulk silicon substrate for high-mobility channel metal-oxide-semiconductor field-effect transistors
5. B. Tillack and P. Zaumseil,Silicon Heterostructure Handbook, Strained SiGe and Si Epitaxy(Taylor & Francis, London, 2006), p. 33.
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