Pure germanium epitaxial growth on thin strained silicon-germanium graded layers on bulk silicon substrate for high-mobility channel metal-oxide-semiconductor field-effect transistors-Reference-Cited by-同舟云学术

Pure germanium epitaxial growth on thin strained silicon-germanium graded layers on bulk silicon substrate for high-mobility channel metal-oxide-semiconductor field-effect transistors

Published:2006-08 Issue:8 Volume:35 Page:1607-1612
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Dey S.,Joshi S.,Garcia-Gutierrez D.,Chaumont M.,Campion A.,Jose-Yacaman M.,Banerjee S. K.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-006-0205-y.pdf

Reference16 articles.

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