Threshold voltage shift of amorphous silicon thin film transistors with atmospheric pressure chemical vapor deposition silicon dioxide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111615
Reference9 articles.
1. Technical developments and trends in a-Si TFT-LCDs
2. Charge trapping instabilities in amorphous silicon‐silicon nitride thin‐film transistors
3. Metastable Defects in Amorphous-Silicon Thin-Film Transistors
4. Resolution of amorphous silicon thin‐film transistor instability mechanisms using ambipolar transistors
5. Study of the Vth shift of the thin-film transistor by the bias temperature stress test
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1. AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with low temperature liquid phase deposited Al2O3 gate insulator;Journal of Applied Physics;2008-09
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