Technical developments and trends in a-Si TFT-LCDs-Reference-Cited by-同舟云学术

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Technical developments and trends in a-Si TFT-LCDs

Published:1989-12 Issue:1-3 Volume:115 Page:27-32
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Oana Yasuhisa

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Conference Record of the 1988 IDRC;Nagayasu,1988

2. Conference Record of the 1985 IDRC;Sunata,1985

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bottom gate single crystal Si thin-film transistors fabricated by all sputtering processes;Japanese Journal of Applied Physics;2022-07-15

2. Low doping in-situ strategy leading to polysilicon based TFTs exhibiting high stability under stress effects and enhanced electrical performances;Materials Research Express;2022-02-01

3. TFT Channel Materials for Display Applications: From Amorphous Silicon to Transition Metal Dichalcogenides;Advanced Materials;2020-03-16

4. Thermal Stress Effect on Nickel Silicide Seed-Induced Laterally Crystallized Polycrystalline-Silicon Thin-Film Transistors;Journal of Nanoscience and Nanotechnology;2016-09-01

5. Thermal Stress Effects on the Electrical Properties of p-Channel Polycrystalline-Silicon Thin-Film Transistors Fabricated via Metal-Induced Lateral Crystallization;IEEE Transactions on Semiconductor Manufacturing;2015-02

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