AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with low temperature liquid phase deposited Al2O3 gate insulator-Reference-Cited by-同舟云学术

AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with low temperature liquid phase deposited Al2O3 gate insulator

Published:2008-09 Issue:5 Volume:104 Page:054116
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Basu Sarbani,Singh Pramod K.,Sze Po-Wen,Wang Yeong-Her

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2976318

Reference27 articles.

1. 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors

2. Very high power-added efficiency and low-noise 0.15- mu m gate-length pseudomorphic HEMTs

3. GaAs Metal–Oxide–Semiconductor Field Effect Transistors Fabricated with Low-Temperature Liquid-Phase-Deposited SiO2

4. HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition

5. Growth and physical properties of Ga2O3 thin films on GaAs(001) substrate by molecular-beam epitaxy

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modulation of electron transport and quantum lifetimes in symmetric and asymmetric AlGaAs/InGaAs double quantum well structures;Japanese Journal of Applied Physics;2023-12-27

2. Transport and quantum lifetimes of electrons in modulation doped Al0.3Ga0.7As/In0.15Ga0.85As double quantum well structure;Physics Letters A;2023-06

3. Photoelectrocatalytic activity of methylene blue using chemically sprayed Bi2WO6 photoanode under natural sunlight;Journal of Alloys and Compounds;2023-05

4. Electric field induced non-monotonic electron transport in pseudomorphic Al0.3Ga0.7As/In0.15Ga0.85As coupled quantum well structure;Physica E: Low-dimensional Systems and Nanostructures;2023-01

5. Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO2 as a Gate Dielectric;Materials;2016-10-25