GaAs Metal–Oxide–Semiconductor Field Effect Transistors Fabricated with Low-Temperature Liquid-Phase-Deposited SiO2-Reference-Cited by-同舟云学术

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GaAs Metal–Oxide–Semiconductor Field Effect Transistors Fabricated with Low-Temperature Liquid-Phase-Deposited SiO2

Published:2002-09-15 Issue:Part 1, No. 9 Volume:41 Page:5561-5562
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Huang Chien-Jung,Ya Zhen-Song,Horng Jui-Hong,Houng Mau-Phon,Wang Yeong-Her

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=9R/a=5561/pdf

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Negative Capacitance for Stabilizing the Logic State in a Tunnel Field-Effect Transistor;ACS Applied Nano Materials;2024-04-02

2. AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with low temperature liquid phase deposited Al2O3 gate insulator;Journal of Applied Physics;2008-09

3. Electrical Properties of Liquid Phase Deposited SiO[sub 2] on Photochemical Treated GaN;Electrochemical and Solid-State Letters;2008

4. Electronic properties of adsorbates on GaAs(001)-c(2×8)∕(2×4);The Journal of Chemical Physics;2007-10-07

5. Direct and indirect causes of Fermi level pinning at the SiO∕GaAs interface;The Journal of Chemical Physics;2007-02-28

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