Growth and physical properties of Ga2O3 thin films on GaAs(001) substrate by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1572478
Reference5 articles.
1. Low D/sub it/, thermodynamically stable Ga/sub 2/O/sub 3/-GaAs interfaces: fabrication, characterization, and modeling
2. Ga2O3films for electronic and optoelectronic applications
3. Interface charge and nonradiative carrier recombination in Ga[sub 2]O[sub 3]–GaAs interface structures
4. Thermally induced oxide crystallinity and interface destruction in Ga2O3–GaAs structures
5. Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor
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