Spectroscopic analysis of electrical properties in polar semiconductors with over-damped plasmons
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1655681
Reference35 articles.
1. Characterization of the free‐carrier concentrations in doped β‐SiC crystals by Raman scattering
2. Raman spectroscopic and Hall effect analysis of the free electron concentration in GaAs with ultrahigh silicon doping
3. Raman scattering from anisotropic LO‐phonon–plasmon–coupled mode inn‐type 4H– and 6H–SiC
4. Determination of the hole concentration and mobility of p-GaP by Hall and by Raman measurements
5. Raman scattering from LO phonon-plasmon coupled modes and Hall-effect in n-type silicon carbide 4H–SiC
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