Raman spectroscopic and Hall effect analysis of the free electron concentration in GaAs with ultrahigh silicon doping
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353771
Reference14 articles.
1. Heavily Si-Doped GaAs and AlAs/n-GaAs Superlattice Grown by Molecular Beam Epitaxy
2. The calibration of the strength of the localized vibrational modes of silicon impurities in epitaxial GaAs revealed by infrared absorption and Raman scattering
3. Plasmons, photoluminescence, and band‐gap narrowing in very heavily dopedn‐GaAs
4. Atomic layer molecular beam epitaxy (Almbe) of III?V compounds: Growth modes and applications
5. LO-Phonon-Plasmon Dispersion in GaAs Hydrodynamical Theory and Experimental Results
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