Enhanced broadband IR absorption and electrical characteristics of silicon variably hyperdoped by sulfur (1018-1021 cm−3) by ion implantation/pulsed laser annealing-Reference-Cited by-同舟云学术

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Enhanced broadband IR absorption and electrical characteristics of silicon variably hyperdoped by sulfur (1018-1021 cm−3) by ion implantation/pulsed laser annealing

Published:2024-12 Issue: Volume:184 Page:108830
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Podlesnykh I.M.^ORCID,Kovalev M.S.,Nastulyavichus A.A.,Stsepuro N.G.,Pushkarev S.S.,Kozlova E.A.,Dravin V.A.,Vlasov A.I.,Platonov P.V.,Kudryashov S.I.

Funder

Ministry of Science and Higher Education of the Russian Federation

Publisher

Elsevier BV

Reference37 articles.

1. Formation of a reliable intermediate band in Si heavily coimplanted with chalcogens (S, Se, Te) and group III elements (B, Al);Sánchez;Phys. Rev. B,2010

2. Hyperdoped silicon materials: from basic materials properties to sub-bandgap infrared photodetectors;Sher;Semicond. Sci. Technol.,2023

3. Hyperdoped silicon: processing, properties, and devices;Tong;J. Semiconduct.,2022

4. Infrared absorption and sub-bandgap photo-response of hyperdoped silicon by ion implantation and ultrafast laser melting;Li;J. Alloys Compd.,2021

5. Hyperdoped crystalline silicon for infrared photodetectors by pulsed laser melting: a review;Fu;Phys. Status Solidi,2022

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