Raman analysis of Si/Ge strained‐layer superlattices under hydrostatic pressure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104894
Reference20 articles.
1. Structure and optical properties of Ge‐Si ordered superlattices
2. Symmetrically strained Si/Ge superlattices on Si substrates
3. Indirect, quasidirect, and direct optical transitions in the pseudomorphic (44)-monolayer Si-Ge strained-layer superlattice on Si(001)
4. Theory of optical transitions in Si/Ge(001) strained-layer superlattices
5. New optical transitions in strained Si-Ge superlattices
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2. Formation of GeSn alloy on Si(100) by low-temperature molecular beam epitaxy;Applied Physics Letters;2014-12-29
3. Influence of GeSi interfacial layer on Ge–Ge optical phonon mode in SiO2 films embedded with Ge nanocrystals;Applied Physics Letters;2009-10-26
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