Formation of grown-in defects in molecular beam epitaxial Ga(In)NP: Effects of growth conditions and postgrowth treatments
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2895379
Reference27 articles.
1. Electronic Properties of Ga(In)NAs Alloys
2. Physics and Applications of Dilute Nitrides
3. Luminescence quenching and the formation of the GaP1−xNxalloy in GaP with increasing nitrogen content
4. N incorporation in GaP and band gap bowing of GaNxP1−x
5. Composition dependence of interband transition intensities in GaPN, GaAsN, and GaPAs alloys
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1. Defect properties of solar cells with layers of GaP based dilute nitrides grown by molecular beam epitaxy;Journal of Applied Physics;2020-07-14
2. MOVPE growth of GaP/GaPN core–shell nanowires: N incorporation, morphology and crystal structure;Nanotechnology;2019-01-14
3. Impact of N Incorporation on VLS Growth of GaP(N) Nanowires Utilizing UDMH;Nanoscale Research Letters;2018-12
4. Photon upconversion promoted by defects in low-dimensional semiconductor nanostructures;Defects in Advanced Electronic Materials and Novel Low Dimensional Structures;2018
5. Enhanced conversion efficiency in wide-bandgap GaNP solar cells;Applied Physics Letters;2015-10-12
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