Enhanced conversion efficiency in wide-bandgap GaNP solar cells-Reference-Cited by-同舟云学术

Enhanced conversion efficiency in wide-bandgap GaNP solar cells

Published:2015-10-12 Issue:15 Volume:107 Page:153901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sukrittanon S.¹,Liu R.²,Ro Y. G.²,Pan J. L.²,Jungjohann K. L.³,Tu C. W.¹²,Dayeh S. A.¹²

Affiliation:

1. Graduate Program of Material Science and Engineering, University of California, San Diego, La Jolla, California 92037, USA

2. Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92037, USA

3. Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

Funder

National Science Foundation

Sandia National Laboratories, National Nuclear Security Administration

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/am-pdf/10.1063/1.4933317

Reference36 articles.

1. T. J. Grassman , J. A. Carlin , C. Ratcliff , D. J. Chmielewski , and S. A. Ringel , in IEEE 39th Photovoltaic Specialists Conference (PVSC) (2013), p. 0149.

2. Comparison of GaAsP solar cells on GaP and GaP/Si

3. Nucleation-related defect-free GaP/Si(100) heteroepitaxy via metal-organic chemical vapor deposition

4. Control and elimination of nucleation-related defects in GaP/Si(001) heteroepitaxy

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