Electrical conduction in epitaxial BeSeTe/Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1322598
Reference16 articles.
1. Molecular‐beam epitaxy of beryllium‐chalcogenide‐based thin films and quantum‐well structures
2. Molecular beam epitaxy of BeTe on vicinal Si(1 0 0) surfaces
3. Heteroepitaxial growth of BeSe on vicinal Si(001) surfaces
4. Growth and characterization of beryllium-based II–VI compounds
5. Electrical properties of light-emitting devices based on the II–VI compounds BeTe and BeMgZnSe
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2. III-V junctions on silicon substrates using BeTe buffer layers for solar cell applications;Journal of Applied Physics;2008-03-15
3. Electronic and optical properties of beryllium chalcogenide/silicon heterostructures;Physical Review B;2006-06-06
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