Molecular beam epitaxy of BeTe on vicinal Si(1 0 0) surfaces-Reference-Cited by-同舟云学术

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Molecular beam epitaxy of BeTe on vicinal Si(1 0 0) surfaces

Published:1997-05 Issue: Volume:175-176 Page:624-631
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Zhou Xiaochuan,Jiang Shan,Kirk Wiley P.

Funder

Texas Higher Education Coordinating Board

Advanced Research Projects Agency

National Science Foundation

Air Force Office of Scientific Research

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference24 articles.

1. Properties of GaAs on Si grown by molecular beam epitaxy

2. Proc. 1995 IEEE Cornell Conf. on Adv. Concepts in High Speed Semi. Dev. and Circuits;Zhou,1995

3. Interface structure of ZnS/Si(001) and comparison with ZnSe/Si(001) and GaAs/Si(001)

4. Effect of interface chemistry on the growth of ZnSe on the Si(100) surface

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1. Flat and twin-free InAs layer growth on Ge (1 1 1) substrates;Journal of Crystal Growth;2020-08

2. Effects of Bi Irradiation on the Molecular Beam Epitaxy Growth of GaSb on Ge (111) Vicinal Substrates;physica status solidi (a);2019-08-08

3. Suppression of twin generation in the growth of GaAs on Ge (111) substrates;Journal of Crystal Growth;2017-11

4. Substrates for the Epitaxial Growth of MCT;Mercury Cadmium Telluride;2010-09-04

5. Molecular-Beam Epitaxial Growth of HgCdTe;Springer Handbook of Crystal Growth;2010

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