Interface structure of ZnS/Si(001) and comparison with ZnSe/Si(001) and GaAs/Si(001)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.52.11201/fulltext
Reference16 articles.
1. Effect of interface chemistry on the growth of ZnSe on the Si(100) surface
2. The formation mechanism of planar defects in compound semiconductors grown epitaxially on {100} silicon substrates
3. The growth and structure of epitaxial films and heterojunctions of II–VI compounds
4. Some optical and electron microscope comparative studies of excimer laser‐assisted and nonassisted molecular‐beam epitaxically grown thin GaAs films on Si
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