Generalized band anticrossing model for highly mismatched semiconductors applied toBeSexTe1−x
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.72.073204/fulltext
Reference19 articles.
1. Electrical conduction in epitaxial BeSeTe/Si
2. Development of epitaxial silicon lattice-matched insulators: silicon heterostructures for quantum confinement
3. Interaction of Localized Electronic States with the Conduction Band: Band Anticrossing in II-VI Semiconductor Ternaries
4. Composition dependence of the hydrostatic pressure coefficients of the bandgap ofZnSe1−xTexalloys
5. Origin of the large band-gap bowing in highly mismatched semiconductor alloys
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