Heteroepitaxial growth of BeSe on vicinal Si(001) surfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122051
Reference17 articles.
1. Interface structure of ZnS/Si(001) and comparison with ZnSe/Si(001) and GaAs/Si(001)
2. Effect of interface chemistry on the growth of ZnSe on the Si(100) surface
3. Epitaxial growth of ZnS on bare and arsenic-passivated vicinal Si(100) surfaces
4. Laser diodes based on beryllium-chalcogenides
5. Stacking-fault energy of II–VI compounds
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1. First-principles investigation on the electronic and magnetic properties of cubic Be0.75Mn0.25X (X=S, Se, Te);Journal of Alloys and Compounds;2013-10
2. III-V junctions on silicon substrates using BeTe buffer layers for solar cell applications;Journal of Applied Physics;2008-03-15
3. Beyond Silica: Nonoxidic Mesostructured Materials;Advanced Materials;2007-05-07
4. Intrinsic Vacancy-Induced Nanoscale Wire Structure in HeteroepitaxialGa2Se3/Si(001);Physical Review Letters;2005-03-22
5. HgCdTe on Si: Present status and novel buffer layer concepts;Journal of Electronic Materials;2003-08
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