The physical mechanism on the threshold voltage temperature stability improvement for GaN HEMTs with pre-fluorination argon treatment-Reference-Cited by-同舟云学术

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The physical mechanism on the threshold voltage temperature stability improvement for GaN HEMTs with pre-fluorination argon treatment

Published:2016-06-06 Issue:23 Volume:108 Page:233507
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang Yun-Hsiang¹²,Liang Yung C.¹³,Samudra Ganesh S.¹,Huang Chih-Fang⁴,Kuo Wei-Hung⁵,Lo Guo-Qiang²

Affiliation:

1. Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260

2. A*STAR Institute of Microelectronics, Singapore 117685

3. National University of Singapore (Suzhou) Research Institute, Suzhou 215123, China

4. Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan

5. Industrial Technology Research Institute, Chutung 31040, Taiwan

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4953573

Reference21 articles.

1. Au-Free Normally-Off AlGaN/GaN-on-Si MIS-HEMTs Using Combined Partially Recessed and Fluorinated Trap-Charge Gate Structures

2. 6.5 V High Threshold Voltage AlGaN/GaN Power Metal-Insulator-Semiconductor High Electron Mobility Transistor Using Multilayer Fluorinated Gate Stack

3. High-Temperature Operation of Normally Off-Mode AlGaN/GaN Heterostructure Field-Effect Transistors with p-GaN Gate

4. Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier

5. High-temperature studies of multiple fluorinated traps within an Al2O3gate dielectric for E-Mode AlGaN/GaN power MIS-HEMTs

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1. Fluorine and related complexes in α-Al2O3;Journal of Applied Physics;2023-08-09

2. CMOS-compatible GaN-based high electron mobility transistors with gate-first technology;Microelectronic Engineering;2022-08

3. Performance improvement in NiO _x -based GaN MOS-HEMTs;Semiconductor Science and Technology;2022-06-21

4. GaN/InGaN double quantum well (DQW) gate structure for GaN-on-Si based normally-off AlGaN/GaN high electron mobility transistors (HEMTs);Materials Science in Semiconductor Processing;2021-11

5. High-performance quasi-vertical GaN Schottky barrier diode with anode selective fluorine treatment;Semiconductor Science and Technology;2019-10-11

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