CMOS-compatible GaN-based high electron mobility transistors with gate-first technology-Reference-Cited by-同舟云学术

CMOS-compatible GaN-based high electron mobility transistors with gate-first technology

Published:2022-08 Issue: Volume:264 Page:111860
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Gao Sheng,Xie Zijing,Xiong Nianhe,Liu Xiaoyi,Wang Hong

Funder

Science and Technology Planning Project of Guangdong Province

Guangzhou Municipal Science and Technology Project

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference52 articles.

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4. Temperature-dependent strain relaxation of the AlGaN barrier in AlGaN∕GaN heterostructures with and without Si3N4 surface passivation;Chen;Appl. Phys. Lett.,2006

5. Gate-first AlGaN/GaN HEMT technology for enhanced threshold voltage stability based on MOCVD-grown in situ SiN x;Cheng;J. Phys. D. Appl. Phys.,2021

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