High-temperature studies of multiple fluorinated traps within an Al2O3gate dielectric for E-Mode AlGaN/GaN power MIS-HEMTs-Reference-Cited by-同舟云学术

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High-temperature studies of multiple fluorinated traps within an Al2O3gate dielectric for E-Mode AlGaN/GaN power MIS-HEMTs

Published:2015-12-07 Issue:2 Volume:31 Page:025004
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Wang Yun-Hsiang,Liang Yung C,Samudra Ganesh S,Chu Po-Ju,Liao Ya-Chu,Huang Chih-Fang,Kuo Wei-Hung,Lo Guo-Qiang

Funder

Suzhou Science and Technology Development Grant

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/31/i=2/a=025004/pdf

Reference26 articles.

1. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

2. p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current

3. Enhancement-Mode AlGaN/AlN/GaN High Electron Mobility Transistor with Low On-State Resistance and High Breakdown Voltage

4. Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate

5. Enhancement-Mode AlGaN/GaN HEMTs Fabricated by Standard Fluorine Ion Implantation with a Si3N4 Energy-Absorbing Layer

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1. Fabrication, and Direct Current and cryogenic analysis of SF₆-treated AlGaN/GaN Schottky barrier diodes;Journal of Vacuum Science & Technology B;2023-01

2. GaN/InGaN double quantum well (DQW) gate structure for GaN-on-Si based normally-off AlGaN/GaN high electron mobility transistors (HEMTs);Materials Science in Semiconductor Processing;2021-11

3. The Impact of AlxGa1−xN Back Barrier in AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Six-Inch MCZ Si Substrate;Coatings;2020-06-17

4. Improved performance of fully-recessed normally-off LPCVD SiN/GaN MISFET using N2O plasma pretreatment;Solid-State Electronics;2019-06

5. Structural, dielectric and ferroelectric studies of thermally stable and efficient energy storage ceramic materials: (Na0.5-K Bi0.5-La )TiO3;Ceramics International;2018-11

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