Temperature-dependent activation energy of electromigration in Cu/porous low-k interconnects

Author:

Zheng Hui,Yin Binfeng,Zhou Ke,Chen Leigang,Kuo Chinte

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Understanding electromigration failure behaviors of narrow cobalt lines and the mechanism of reliability enhancement for extremely dilute alloying of manganese oxide;Journal of Alloys and Compounds;2024-01

2. Multi-physics Simulations for Nanoscale CMOS Reliability;2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2023-09-27

3. Simulation Methods of Multi-physics Effects in Nano-scale CMOS;2022 International Electron Devices Meeting (IEDM);2022-12-03

4. A Space–Time Neural Network for Analysis of Stress Evolution Under DC Current Stressing;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2022-12

5. A physics-based electromigration reliability model for interconnects lifetime prediction;Science China Information Sciences;2021-10-12

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