Effects of thermal annealing on the emission properties of type-II InAs/GaAsSb quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3062979
Reference18 articles.
1. Long-wavelength light emission and lasing from InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer
2. Room temperature emission at 1.6μm from InGaAs quantum dots capped with GaAsSb
3. Optical transitions in type-II InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer
4. Enhanced thermal stability and emission intensity of InAs quantum dots covered by an InGaAsSb strain-reducing layer
5. Enhancing the optical properties of InAs quantum dots by an InAlAsSb overgrown layer
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