Enhancing the optical properties of InAs quantum dots by an InAlAsSb overgrown layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2798601
Reference19 articles.
1. 1.3 μm room-temperature GaAs-based quantum-dot laser
2. High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents
3. High-speed 1.3μm tunnel injection quantum-dot lasers
4. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates
5. InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm
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1. Investigation of strain profile and band-alignment study in InAs/GaAsSb quantum dot heterostructure with varying Sb content;Infrared Sensors, Devices, and Applications XIII;2023-10-10
2. Influence of GaAsSb structural properties on the optical properties of InAs/GaAsSb quantum dots;Physica E: Low-dimensional Systems and Nanostructures;2017-10
3. Influence of the growth conditions on the optical and structural properties of self-assembled InAs/GaAs quantum dots for low As/In ratio;Applied Surface Science;2017-01
4. Emission characteristics of shape-engineered InAs/InAlGaAs quantum dots subjected to thermal treatments;Journal of the Korean Physical Society;2016-07
5. Quantum control study of ultrafast optical responses in semiconductor quantum dot devices;Optics Express;2014-12-04
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